R6509KND3TL1
Rohm Semiconductor
English
Part Number: | R6509KND3TL1 |
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Manufacturer/Brand: | LAPIS Technology |
Part of Description: | HIGH-SPEED SWITCHING, NCH 650V 9 |
Datasheets: | None |
RoHs Status: | ROHS3 Compliant |
ECAD Model: | |
Payment: | PayPal / Credit Card / T/T |
Shipment Way: | DHL / Fedex / TNT / UPS / EMS |
Share: |
Ship From: Hong Kong
Quantity | Unit Price |
---|---|
1+ | $1.85 |
10+ | $1.658 |
100+ | $1.333 |
500+ | $1.0952 |
1000+ | $0.9074 |
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Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 5V @ 230µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252 |
Series | - |
Rds On (Max) @ Id, Vgs | 585mOhm @ 2.8A, 10V |
Power Dissipation (Max) | 94W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Base Product Number | R6509 |
650V 7A TO-220FM, HIGH-SPEED SWI
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650V 9A TO-220FM, HIGH-SPEED SWI
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650V 7A TO-220FM, LOW-NOISE POWE
650V 11A TO-220FM, LOW-NOISE POW
BRD SPT SNAP LCK SCRW MNT 9.45MM
650V 11A TO-252, LOW-NOISE POWER
650V 11A TO-220FM, HIGH-SPEED SW
HIGH-SPEED SWITCHING, NCH 650V 1
MOSFET N-CH 650V 11A LPTS
HIGH-SPEED SWITCHING, NCH 650V 7
MOSFET N-CH 650V 7A LPTS
MOSFET N-CH 650V 7A LPTS
MOSFET N-CH 650V 9A LPTS
650V 9A TO-252, LOW-NOISE POWER
650V 7A TO-252, LOW-NOISE POWER
MOSFET N-CH 650V 9A LPTS
June 6th, 2024
April 18th, 2024
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December 20th, 2023
![]() R6509KND3TL1Rohm Semiconductor |
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